韩冬
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副教授
博士生导师
硕士生导师
- 教师拼音名称：handong
- 所在单位：信息科学与工程学院
- 学历：博士研究生毕业
- 办公地点：The Building of Information Science, 518
- 性别：男
- 联系方式：1ea47b0099880cd492f30ca162fba4b5a85b2b14682827001ab1ca991fdf7f116d1bd8dd42728cbb3035c5c700d1009d3d8079467f62825a05e4cb468760358270df72bdd48e4da232092737f15ff40d83c40c1d1ccf0b379363ea09a80153949ac05f83eac04a80a23d8202212fe202d48821897869e798f610a5d8c2a8f655
- 学位：博士
- 在职信息：在职
- 毕业院校：吉林大学
- 学科：微电子学与固体电子学
曾获荣誉：
- 2018-05 曾获荣誉当选： 吉林省自然科学学术成果奖
访问量：
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[1]Ma, Ming-Yu,Wang, Dan,Huang, Yu-Ting,Chen, Nian-Ke,Li, Xian-Bin*,韩冬,Sun, Hong-Bo,Zhang, Shengbai.Vacancy Defects in 2D Ferroelectric In2Se3 and the Conductivity Modulation by Polarization-Defect Coupling.NANO LETTERS,25(10):3726-3732.10.1021/acs.nanolett.4c05165,
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[2]Dong Han, Xian-Bin Li, Nian-Ke Chen, Dan Wang, Sheng-Yi Xie, Xue-Jiao Chen, and De-Zhen Shen, “Thickness-dependent atomic structures of two-dimensional few-layer ZnO: A density functional theory study”, Phys. Rev. B 109, 014105 (2024).
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[3]Dong Han, Xian-Bin Li, Dan Wang, Nian-Ke Chen, and Xi-Wu Fan, “Doping in the two-dimensional limit: p/n-type defects in monolayer ZnO”, Phys. Rev. B 105, 024104 (2022).
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[4]Dong Han, Y.-Y. Sun, Junhyeok Bang, Y.-Y. Zhang, Hong-Bo Sun, Xian-Bin Li, S. B. Zhang, “Deep electron traps and origin of p-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4”, Phys. Rev. B 87, 155206 (2013).
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[5]Dong Han, Damien West, Xian-Bin Li, Sheng-Yi Xie, Hong-Bo Sun, S. B. Zhang, “Impurity doping in SiO2: Formation energies and defect levels from first-principles calculations”, Phys. Rev. B 82, 115132 (2010).
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[6]Dong Han, Junhyeok Bang, Weiyu Xie, Vincent Meunier, and Shengbai Zhang, “Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction”, J. Phys. Chem. Lett. 7, 3548 (2016).
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[7]Dong Han, Xue-Jiao Chen, Hai Xu, Chen Jiao, Ji-Lian Xu, Ke-Xue Li, Lei Liu, Yao-Biao Li, and De-Zhen Shen, “Stretch/Compress-Modulated Spin Splitting in One-Dimensional Melem Chain with a Helical Structure”, Phys. Status Solidi RRL 13, 1900294 (2019).
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[8]Dong Han, Xian-Bin Li, Y.-Y. Sun, S.-B. Zhang, Sheng-Yi Xie, Sukit Limpijumnong, Zhan-Guo Chen, Hong-Bo Sun, “Role of Hydrogen in the Growth of Boron Nitride: Cubic Phase versus Hexagonal Phase”, Comput. Mater. Sci. 82, 310 (2014).
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[9]Hai Xu, Dong Han(共同一作), Yang Bao, Fang Cheng, Zijing Ding, Sherman J. R. Tan, and Kian Ping Loh, “Observation of Gap Opening in 1T’ Phase MoS2 Nanocrystals”, Nano Lett. 18, 5085 (2018).
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[10]Dan Wang, Dong Han(共同一作), Damien West, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Vincent Meunier, Shengbai Zhang and Xian-Bin Li, “Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport”, NPJ Comput. Mater. 5, 8 (2019).