东北大学主页平台杨杰--Home-- A novel empirical I-V Model for GaN HEMTs Solid-State Electronics

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With Certificate of Graduation for Doctorate Study

美国锡拉丘兹大学

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Date of Employment:2012-11-01

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A novel empirical I-V Model for GaN HEMTs Solid-State Electronics

Release Time:2018-09-17 Hits:

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