韩冬
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Associate professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
- Name (Pinyin):handong
- School/Department:Northeastern University
- Education Level:With Certificate of Graduation for Doctorate Study
- Business Address:The Building of Information Science, 518
- Gender:Male
- Contact Information:1ea47b0099880cd492f30ca162fba4b5a85b2b14682827001ab1ca991fdf7f116d1bd8dd42728cbb3035c5c700d1009d3d8079467f62825a05e4cb468760358270df72bdd48e4da232092737f15ff40d83c40c1d1ccf0b379363ea09a80153949ac05f83eac04a80a23d8202212fe202d48821897869e798f610a5d8c2a8f655
- Status:Employed
- Alma Mater:Jilin University
- Discipline:Microelectronics and Solid-state Electronics
- 2018-05Previously Honored and Elected:Natural Science Academic Achievement Award of Jilin Province in 2018
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[ 1 ] Ma, Ming-Yu,Wang, Dan,Huang, Yu-Ting,Chen, Nian-Ke,Li, Xian-Bin*,韩冬,Sun, Hong-Bo,Zhang, Shengbai.Vacancy Defects in 2D Ferroelectric In2Se3 and the Conductivity Modulation by Polarization-Defect Coupling.NANO LETTERS,25(10):3726-3732.10.1021/acs.nanolett.4c05165,
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[ 2 ] Dong Han, Xian-Bin Li, Nian-Ke Chen, Dan Wang, Sheng-Yi Xie, Xue-Jiao Chen, and De-Zhen Shen, “Thickness-dependent atomic structures of two-dimensional few-layer ZnO: A density functional theory study”, Phys. Rev. B 109, 014105 (2024).
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[ 3 ] Dong Han, Xian-Bin Li, Dan Wang, Nian-Ke Chen, and Xi-Wu Fan, “Doping in the two-dimensional limit: p/n-type defects in monolayer ZnO”, Phys. Rev. B 105, 024104 (2022).
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[ 4 ] Dong Han, Y.-Y. Sun, Junhyeok Bang, Y.-Y. Zhang, Hong-Bo Sun, Xian-Bin Li, S. B. Zhang, “Deep electron traps and origin of p-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4”, Phys. Rev. B 87, 155206 (2013).
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[ 5 ] Dong Han, Damien West, Xian-Bin Li, Sheng-Yi Xie, Hong-Bo Sun, S. B. Zhang, “Impurity doping in SiO2: Formation energies and defect levels from first-principles calculations”, Phys. Rev. B 82, 115132 (2010).
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[ 6 ] Dong Han, Junhyeok Bang, Weiyu Xie, Vincent Meunier, and Shengbai Zhang, “Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction”, J. Phys. Chem. Lett. 7, 3548 (2016).